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SemiEngineeringSilicon

Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

11.03

Seoul National University -led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf 0.5 Zr 0.5 O 2 for DRAM-class sub-volt capacitors.” The first…

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